Phys. Rev. E 68, 041602 (2003) [7 pages]

Dynamic transition in etching with poisoning

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F. D. A. Aarão Reis
Instituto de Física, Universidade Federal Fluminense, Avenida Litorânea s/n, 24210-340 Niterói, Rio de Janeiro, Brazil

Received 19 March 2003; published 2 October 2003

We study a lattice model for etching of a crystalline solid including the deposition of a poisoning species. The model considers normal and lateral erosion of the columns of the solid by a flux of etching particles and the blocking effects of impurities formed at the surface. As the probability p of formation of this poisoning species increases, the etching rate decreases and a continuous transition to a pinned phase is observed. The transition is in the directed percolation (DP) class, with the fraction of the exposed columns as the order parameter. This interpretation is consistent with a mapping of the interface problem in d+1 dimensions onto a d-dimensional contact process, and is confirmed by numerical results in d=1 and d=2. In the etching phase, the interface width scales with Kardar-Parisi-Zhang (KPZ) exponents, and shows a crossover from the critical DP behavior (Wt) to KPZ near the critical point, at etching times of the order of (pc-p). Anomalous roughening is observed at criticality, with the roughness exponent related to DP exponents as αc>1. The main differences from previously studied DP transitions in growth models and isotropic percolation transitions in etching models are discussed. Investigations in real systems are suggested.


©2003 The American Physical Society

URL: http://link.aps.org/abstract/PRE/v68/e041602
DOI: 10.1103/PhysRevE.68.041602
PACS: 05.50.+q, 64.60.Ht, 68.35.Ct, 68.55.Ln

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